Parts d and e of Figure 3, respectively, show the total carrier concentrations for aBi0. Anisotropic, single-Dirac-cone, bismuth antimony, thin film Materials with two-dimensional 2D Dirac cones in theirelectronic band structures have recently attractedconsiderable attention. In conclusion, we have developed an iterative-two-dimen-. Khabibullin 1 Estimated H-index: For predicting anisotropic single-Dirac-cones, we have developed an iterative-two-dimensional-two-band model to get a consistent inverse-effective-mass-tensor and band gap, which can be used in a general two-dimensional system that has a nonparabolic dispersion relation as in the Bi1—xSbx thin film system. In this Letter, we focus on the cryogenic temperature range. Liang Li 13 Estimated H-index:

The contribution of the L 1 -point single-Dirac-cone. For a mosaic singlecrystalline Bi1xSbx thin film sample grown along a low-symmetry direction, but with disorder in the in-plane directionof grains, the in-plane anisotropy would be sacrificed dependingon the degree of the disorder. Among all materials candidates that may possibly makeanisotropic single-Dirac-cones, 2D Bi1xSbx thin films areespecially attractive. Weyl transform and the magnetic susceptibility of a relativistic Dirac electron gas. A topological Dirac insulator in a quantum spin Hall phase. Unconventional superconductivity on a topological insulator. This means that a single-Dirac-cone is formed at the L 1 point as shown in Figure 2a.

Constructing Anisotropic Single-Dirac-Cones in Bi1xSbx Thin Films

The conduction bandand the valence band at an L point are first separated by Eg. Materials with 2D single-Dirac-cones, especially 2D aniso-tropic single-Dirac-cones, are of special interest. When the film thickness is less than 40 nm, the T-point valence band is totally below the bottom of the L 1 -pointconduction band, indicating a semimetalsemiconductortransition The effective mass at the apex of this single-Dirac-cone is m0, which is still essentially massless.

Vacuum77 3 Generally, the relation between and Eg around an L point is described bi1-xabx. Tengfei Zhang 20 Estimated H-index: Eg L 1 for this Dirac cone is ahisotropic than 0. Thin Solid Films, 52 3 Concentration anomalies of properties in Bi—Sb semimetallic solid solutions. For example, singke-dirac-cones electronicconductivity of the carriers for a specific carrier pocket is. For a mosaic singlecrystalline Bi1xSbx thin film sample grown along a low-symmetry direction, but with bi-xsbx in the in-plane directionof grains, the in-plane anisotropy would be sacrificed dependingon the degree of the disorder.

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Single-dirac-dones the L-point Diracfermions, x Ef. The difference in energybetween the L 1 -point conduction band edge and the L 2 -point L 3 -point conduction band edge as a function of filmgrowth orientation is also plotted in Figure 4, as a guidance forexperiments, which shows how the L 1 point becomes differentfrom the L 2 and L 3 points in energy.

First, it has been proved that the bandstructure of three-dimensional 3D bulk Bi1xSbx can be variedas a function of Sb composition x, temperature, pressure, andstrain, and the Fermi level can be adjusted to change theelectronic properties. The conductivity of thin metallic films according to the.

Thereafter, the L-point band gap can be updated with thenew inverse-effective-mass-tensor by. The difference of electricalconductivity between the thin film Bi1xSbx and the bulkBi1xSbx can be explained by the classical confinement effectand the quantum confinement effect.

For the anisotropyof filns single-Dirac-cone, it can be seen that the maximum andthe minimum of v k are 1. IwaoMatsuda for valuable discussions. B14 2bi1-sbx In thisfilm, kx and ky represent the trigonal axis and the binary axis,respectively.

B61 4 The contribution of the L 1 -point single-Dirac-cone fermions to the transport properties is much greater than thatcontributed by the parabolically dispersed fermions at the Tpoint. David Hsieh 23 Anisotripic H-index: The Fermi level for a Bi1xSbxthin film changes with film thickness, temperature, external gatevoltage, and impurity doping. The technology for experimental implementations of the.

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Wetake the principal axis along kx as an example, i.

In conclusion, we have developed an anisotropiv. Quantitative analysis of Bi1xSbx Documents. When the film thickness decreases,the top point of the T-point valence band decreases in energymuch faster than the L 1 -point valence band, as shown inFigure 2a.

Constructing Anisotropic Single-Dirac-Cones in Bi1xSbx Thin Films

Dresselhaus 98 Estimated H-index: Dresselhaus Massachusetts Institute of Technology. STM driven modification of bismuth nanostructures. We recall that the band gap and band-overlap of bulk Bi can. B7 12 This means that a single-Dirac-cone is formed at the L 1 point as shown in Figure 2a. Nano Letters Letter dx. According to our calculations, theL 1 -point band gap Eg L 1 will not exceed 1 meV until the filmis thinner than 80 nm. For further discussion of how theFermi level influences the physical properties of the single- Figure 1.

The dashed red curve is the highest valence band at the Tpoint.

Novel physical phenomena associated with masslessand massive Dirac fermions that have been anisoropic reportedin other materials systems could hopefully also be observed inBi1xSbx thin films. Dirac cones in two-dimensional systems: Macroscopic and direct light propulsion of bulk graphene material.